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Magazine Name : Ieee Transactions On Electron Devices

Year : 2004 Volume number : 51 Issue: 09

Investigation Of Ultralow Leakage In Mos Capacitors On 4h Sic (Article)
Subject: Nitrided Gate , Nonvolatile , Silicon Carbide
Author: Kuan Yew Cheong      Sima Dimitrijev     
page:      1371 - 1379
The Role Of The Mercury-Si Schottky-Barrier Height In -Mosfets (Article)
Subject: Pseudo-Mosfet , Schottky Barier
Author: J.Y. Choi      S. Ahmed     
page:      1380 - 1384
A 2-D Analytical Solution Solution For Sces In Dg Mosfets (Article)
Subject: Mosfets , Short-Channel Effect (Sce) Threshold , Threshold Voltage Roll-Off
Author: Xiaoping Liang      Yuan Taur     
page:      1385 - 1391
Analytical Percolation Model For Predicting Anomalous Charge Loss In Flash Memories (Article)
Subject: Flash Memories , Percolation , Retention
Author: Robin Degraeve      F. Schuler     
page:      1392 - 1400
Sodel Fet: Novelchannel And Source/Drain Profile Engineering Schemes By Selective Si Epitaxial Growth Technology (Article)
Subject: Body Effects , Cmos Device , Epitaxial Growth Floating-Body Effect
Author: S Inaba      Shinji Miyano     
page:      1401 - 1408
Separation Of Channel Backscattering Coefficients In Nanoscale Mosfets (Article)
Subject: Mosfets , Nanoscale , Scattering
Author: Ming-Jer Chen      Huan-Tsung Huang     
page:      1409 - 1415
The Effect Of Lac Doping On Deep Submicrometer Transistor Capacitance And Its Influence On Device Rf Performance (Article)
Subject: Analog , Drain Voltage
Author: K. Narasimhulu      P. Desai     
page:      1416 - 1423
Mobility Enhancement In Dual Channel P-Mosfets (Article)
Subject: Dual Heterostructure , Inversion Mobility
Author: Jongwan Jung      Minju Li     
page:      1424 - 1431
An Advanced No-Snapback Ldmosfet With Optimized Breakdown Characteristics Of Drain N-N+ Diodes (Article)
Subject: Current Breakdown , Electrostatics
Author: Ken Kawamoto      Satoshi Takahashi     
page:      1432 - 1440
Ultrathin Al203 And Hfo2 Gate Dielectrics On Surface - Nitrided Ge (Article)
Subject: Aluminium Oxide , Gate Dielectrics , Ge
Author: Jiunn-Tsair Chen     
page:      1441 - 1447
A New Weight Redistribution Techique For Electron-Electron Scattering In The Mic Simulation (Article)
Subject: Monte Carlo , Relaxation Oscillator
Author: Jongchol Kim      Hyungsoon Shin     
page:      1448 - 1454
Testing And Diagnostics Of Cmos Circuits Using Light Emission From Offf-State Leakage Current (Article)
Subject: Off-State Leakage
Author: Franco Stellari     
page:      1455 - 1461
Investigation Of The Novel Attributes Of A Fully Depleted Dual-Material Gate Soi Mosfet (Article)
Subject: Carrier Transport Efficiency , Dual Material Gate Offset Voltage
Author: Anurag Chaudry      Jagadesh Kumar     
page:      1463 - 1467
Double Gate-Mosfet Subthreshold Circuit For Ultra Low Power Application (Article)
Subject: Cmos Subthreshold Logic , Leakage Currents
Author: Jae-Joon. Kim      Kaushik Roy     
page:      1468 - 1474
Impact Of Collector-Base Junction Traps On Low-Frequency Noise In High Breakdown Voltage Sige Hbts (Article)
Subject: Noise , Breakdown Voltage
Author: Jin Tang     
page:      1475 - 1482
Compact Modeling Of The Noise Of A Bipolar Transistor Crowding Conditions (Article)
Subject: Analog Simulation , Bipolar Transistor , Current - Mode
Author: Jeroen C.J. Paasschens     
page:      1483 - 1495
Influence Of Interface Traps And Surface Mobility Degradation On Scanning Capacitance Microscopy Measurement (Article)
Subject: Dopant Profile , Scanning Capacitance
Author: Yang David Hong      Yew Tong Yeow     
page:      1496 - 1503
Effect Of Interfacial Oxide Thickness On I/F Noise In Polysilicon Emitter Bjts (Article)
Subject: Interfacial Oxide , Noise Modeling
Author: Md Mazhar Hoque      Zeynep Celik Butler     
page:      1504 - 1513
High Sensitive And Wide Detecting Range Mos Tunneling Temperature Sensors For On-Chip Temperature Detection (Article)
Subject: Metal-Oxide-Semiconductor , Temperature Sensor , Devices
Author: Yen-Hao Shih      Shain-Ru Lin     
page:      1514 - 1521
Effects Of A Finite Axial Magnetic Field On The Beam Loading Of A Cavity (Article)
Subject: Beam-Gap Interaction , Beam Loading
Author: Richard Kowalczyk      Yue Ying Lau     
page:      1522 - 1527